Total reflection X-ray fluorescence(TXRF)., in combination with vapor phase decomposition(VPD), provides an efficient method for analyzing trace metal contaminants on silicon wafer surfaces. The progress made in applying these techniques to the analysis of silicon wafers in a wafer fabrication cleanroom environment is reported. Methods of standardization are presented, including the preparation and characterization of VPD standards. While the VPD wafer preparation process increases the sensitivity of the TXRF measurement by at least one order of magnitude, inherent uncertainties associated with the VPD technique itself are apparent. Correlation studies between

VPD TXRF and VPD inductively coupled plasma mass spectrometry(ICP-MS) are presented.